Semiconductor apparatus and method of operating the same

ABSTRACT

A semiconductor apparatus includes a decoder configured to decode an internal command, and generate a first decoding command and a second decoding command. The semiconductor apparatus may include an output timing control circuit configured to delay the second decoding command by a predetermined cycle of the internal clock, and output a delayed decoding command. The semiconductor apparatus may include an input/output control latch circuit configured to output the internal address as a first latch address based on the to second decoding command and the delayed decoding command. The semiconductor apparatus may include an input control latch circuit configured to output the internal address as a second latch address based on the first decoding command.

CROSS-REFERENCES TO RELATED APPLICATION

The present application is a divisional application of U.S. patentapplication Ser. No. 15/458,527, filed on Mar. 14, 2017, and claimspriority under 35 U.S.C. § 119(a) to Korean application number0-2016-0097211, filed on Jul. 29, 2016, in the Korean IntellectualProperty Office, which is incorporated herein by reference in itsentirety.

BACKGROUND 1. Technical Field

Various embodiments may generally relate to a system and semiconductorintegrated circuit, and, more particularly, to a semiconductorapparatus.

2. Related Art

A semiconductor apparatus is configured to operate in synchronizationwith a clock signal. For example, a semiconductor apparatus isconfigured to receive control signals for controlling the semiconductorapparatus, in synchronization with a clock signal, operate by thecontrol signals synchronized with the clock signal and output a signalsynchronized with the clock signal.

Signals for controlling a semiconductor apparatus include controlsignals such as a command and an address. The semiconductor apparatus isconfigured to operate by the command and address signals synchronizedwith a clock signal.

SUMMARY

In an embodiment, a semiconductor apparatus may be provided. Thesemiconductor apparatus may include a decoder configured to decode aninternal command, and generate a first decoding command and a seconddecoding command. The semiconductor apparatus may include an outputtiming control circuit configured to delay the second decoding commandby a to predetermined cycle of the internal clock, and output a delayeddecoding command. The semiconductor apparatus may include aninput/output control latch circuit configured to output the internaladdress as a first latch address based on the second decoding commandand the delayed decoding command. The semiconductor apparatus mayinclude an input control latch circuit configured to output the internaladdress as a second latch address based on the first decoding command.

In an embodiment, a semiconductor apparatus may be provided. Thesemiconductor apparatus may include a first semiconductor chip. Thesemiconductor apparatus may include a second semiconductor chipincluding a second latch group which operates based on signals inputtedfrom the first semiconductor chip.

In an embodiment, a semiconductor apparatus may be provided. Thesemiconductor apparatus may include a first semiconductor chip and asecond semiconductor chip electrically coupled with each other through aplurality of through electrodes, the first semiconductor chip mayinclude a decoder which decodes an internal command and may generate afirst decoding command and a second decoding command, an output timingcontrol circuit which may delay the second decoding command by apredetermined cycle of an internal clock and may output a delayeddecoding command, a first input/output control latch circuit which mayoutput an internal address as a first latch address based on the seconddecoding command and the delayed decoding command, and a first inputcontrol latch circuit which may output the internal address as a secondlatch address based on the first decoding command, and the secondsemiconductor chip receiving the first decoding command, the seconddecoding command, the delayed decoding command and the internal addressas a first decoding transfer command, a second decoding transfercommand, a delayed decoding transfer command and an internal transferaddress through a plurality of through electrodes, and including asecond input/output control latch circuit which may output the internaltransfer address as a third latch address based on the second decodingtransfer command and the delayed decoding transfer command and a secondinput control latch circuit which outputs the internal transfer addressas a fourth latch address based on the first decoding transfer command.

In an embodiment, a method of operating a semiconductor apparatus may beprovided. The method may include receiving an external command. Themethod may include decoding the external command. The method may includeoutputting the external command by delaying the external command by apredetermined time or outputting the external command without delayingthe external command by the predetermined time based on the decoding ofthe external command. The method may include an external address. Themethod may include outputting the external address with or without thepredetermined time delay based on the decoding of the external command.

In an embodiment, a semiconductor apparatus may be provided. Thesemiconductor apparatus may include a decoder configured to decode aninternal command, and generate a first decoding command or a seconddecoding command depending on the internal command. The semiconductorapparatus may include a latch group configured to receive an internaladdress, and output the internal address as a first latch address orsecond latch address based on the first decoding command or the seconddecoding command. The internal address may be delayed by a predeterminedtime and outputted as the first latch address if the second decodingcommand is generated. The internal address may be outputted as thesecond latch address if the first decoding command is generated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram illustrating a representation of anexample of a semiconductor apparatus in accordance with an embodiment.

FIG. 2 is a configuration diagram illustrating a representation of anexample of the output timing control circuit illustrated in FIG. 1.

FIG. 3 is a configuration diagram illustrating a representation of anexample of the first input and output (input/output) control latchcircuit illustrated in FIG. 1.

FIG. 4 is a configuration diagram illustrating a representation of anexample of the first input control latch circuit illustrated in FIG. 1.

FIG. 5 illustrates a block diagram of an example of a representation ofa system employing a semiconductor apparatus and or semiconductorintegrated circuit with the various embodiments discussed above withrelation to FIGS. 1-4.

DETAILED DESCRIPTION

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present disclosure.

Hereinafter, a semiconductor apparatus will be described below withreference to the accompanying drawings through various examples ofembodiments.

Referring to FIG. 1, a semiconductor apparatus in accordance with anembodiment may include a first semiconductor chip 100 and a secondsemiconductor chip 200.

The first semiconductor chip 100 may include a buffer group 110, adecoder 120, an output timing control circuit 130, and a first latchgroup 140.

The buffer group 110 may include a plurality of buffers whichrespectively buffer an external clock signal CLK_ext, an externalcommand CMD_ext and an external address ADD_ext inputted from anexterior and generate respectively an internal clock signal CLK_int, aninternal command CMD_int and an internal address ADD_int.

The buffer group 110 may include first to third buffers 111, 112 and113.

The first buffer 111 may buffer the external clock signal CLK_ext andgenerate the internal clock signal CLK_int.

The second buffer 112 may buffer the external command CMD_ext andgenerate the internal command CMD_int. Each external command CMD_ext andinternal command CMD_int may include a chip select signal, a row addressstrobe signal, a column address strobe signal, a write enable signal anda clock enable signal.

The third buffer 113 may buffer the external address ADD_ext andgenerate the internal address ADD_int. Each external address ADD_ext andinternal address ADD_int may include at least one address.

The first to third buffers 111, 112 and 113 may change signals accordingto the voltage levels used outside the semiconductor apparatus, intosignals according to the voltage levels used inside the semiconductorapparatus.

The decoder 120 may generate a first decoding command CMD_decA and asecond decoding command CMD_decB in response to the internal commandCMD_int and the internal clock signal CLK_int. For example, the decoder120 may decode the internal command CMD_int in synchronization with theinternal clock signal CLK_int, and generate the first and seconddecoding commands CMD_decA and CMD_decB as a decoding result. The firstdecoding command CMD_decA may represent a command which does not requireoutput timing control, and the second decoding command CMD_decB mayrepresent a command which requires output timing control. The outputtiming control may be latency control that is required in a read orwrite operation. In an embodiment, the control of the operation timingof a semiconductor apparatus may be required when the internal commandis received for the purposes of performing a read or write operation.

The output timing control circuit 130 may generate a delayed decodingcommand CMD_decBd in response to the second decoding command CMD_decB,the internal clock signal CLK_int and a control signal CTRL_s. Forexample, the output timing control circuit 130 may determine apredetermined cycle of the internal clock signal CLK_int in response tothe control signal CTRL_s, delay the second decoding command CMD_decB bythe predetermined period of the internal clock signal CLK_int that isdetermined, and output the delayed decoding command CMD_decBd. Thecontrol signal CTRL_s may be an output signal of an operation settingcircuit of the semiconductor apparatus, such as a mode register set anda fuse circuit.

The first latch group 140 may include a first input/output control latchcircuit 141 and a first input control latch circuit 142.

The first input/output control latch circuit 141 may receive and latchthe internal address ADD_int in response to the second decoding commandCMD_decB and the delayed decoding command CMD_decBd, and output thelatched internal address ADD_int as a first latch address ADD_LA. Forexample, the first input/output control latch circuit 141 may receiveand latch the internal address ADD_int when the second decoding commandCMD_decB is inputted, and output the latched internal address ADD_int asthe first latch address ADD_LA when the delayed decoding commandCMD_decBd is inputted.

The first input control latch circuit 142 may receive and latch theinternal address ADD_int in response to the first decoding commandCMD_decA, and output a second latch address ADD_LB. For example, thefirst input control latch circuit 142 may receive and latch the internaladdress ADD_int and output the second latch address ADD_LB, when thefirst decoding command CMD_decA is inputted.

The second semiconductor chip 200 may be stacked on the firstsemiconductor chip 100, and the first and second semiconductor chips 100and 200 may be electrically coupled through a plurality of throughelectrodes TSV1, TSV2, TSV3 and TSV4. The plurality of throughelectrodes may include first to fourth through electrodes TSV1, TSV2,TSV3 and TSV4.

The first through electrode TSV1 may transfer the output signal of thethird buffer 113 of the first semiconductor chip 100, that is, theinternal address ADD_int, as an internal transfer address ADD_intT, tothe second semiconductor chip 200.

The second through electrode TSV2 may transfer the output signal of thedecoder 120 of the first semiconductor chip 100, that is, the firstdecoding command CMD_decA, as a first decoding transfer commandCMD_decAT, to the second semiconductor chip 200.

The third through electrode TSV3 may transfer the output signal of thedecoder 120 of the first semiconductor chip 100, that is, the seconddecoding command CMD_decB, as a second decoding transfer commandCMD_decBT, to the second semiconductor chip 200.

The fourth through electrode TSV4 may transfer the output signal of theoutput timing control circuit 130 of the first semiconductor chip 100,that is, the delayed decoding command CMD_decBd, as a delayed decodingtransfer command CMD_decBdT, to the second semiconductor chip 200.

The second semiconductor chip 200 may operate by receiving the internaladdress ADD_int, the first and second decoding commands CMD_decA andCMD_decB and the delayed decoding command CMD_decBd transferred from thefirst semiconductor chip 100 through the first to fourth throughelectrodes TSV1, TSV2, TSV3 and TSV4, as the internal transfer addressADD_intT, the first and second decoding transfer commands CMD_decAT andCMD_decBT and the delayed decoding transfer command CMD_decBdT.

The second semiconductor chip 200 may include a second latch group 210.

The second latch group 210 may include a second input/output controllatch circuit 211 and a second input control latch circuit 212.

The second input/output control latch circuit 211 may operate inresponse to the internal transfer address ADD_intT, the second decodingtransfer command CMD_decBT and the delayed decoding transfer commandCMD_decBdT inputted through the first through electrode TSV1 and thethird and fourth through electrodes TSV3 and TSV4. For example, thesecond input/output control latch circuit 211 may receive and latch theinternal transfer address ADD_intT when the second decoding transfercommand CMD_decBT is inputted, and output the latched internal transferaddress ADD_intT as a third latch address ADD_LAA when the delayeddecoding transfer command CMD_decBdT is inputted.

The second input control latch circuit 212 may operate in response tothe internal transfer address ADD_intT and the first decoding transfercommand CMD_decAT inputted through the first and second throughelectrodes TSV1 and TSV2. For example, the second input control latchcircuit 212 may receive and latch the internal transfer address ADD_intTand output a fourth latch address ADD_LBB, when the first decodingtransfer command CMD_decAT is inputted.

The output timing control circuit 130 may determine a predeterminedcycle of the internal clock signal CLK_int in response to the controlsignal CTRL_s, delay the second decoding command CMD_decB by thepredetermined period of the internal clock signal CLK_int that isdetermined, and output the delayed decoding command CMD_decBd.

Referring to FIG. 2, the output timing control circuit 130 may includefirst to fourth latches 131, 132, 133 and 134 and an output selectioncircuit 135. The first latch 131 receives the second decoding commandCMD_decB and the internal clock signal CLK_int. The second latch 132receives the output signal of the first latch 131 and the internal clocksignal CLK_int. The third latch 133 receives the output signal of thesecond latch 132 and the internal clock signal CLK_int. The fourth latch134 receives the output signal of the third latch 133 and the internalclock signal CLK_int. Each of the first to fourth latches 131, 132, 133and 134 may receive and latch an input signal each time the internalclock signal CLK_int transitions to a predetermined level, and outputthe latched signal as an output signal. Each of the first to fourthlatches 131, 132, 133 and 134 may be constructed by a flip-flop.

The output selection circuit 135 may output one among the output signalsof the first to fourth latches 131, 132, 133 and 134, as the delayeddecoding command CMD_decBd, in response to the control signal CTRL_s.The control signal CTRL_ s may include at least one control signal.

The output timing control circuit 130 configured as mentioned above mayoperate as follows.

In the case where the output selection circuit 135 outputs the outputsignal of the first latch 131 as the delayed decoding command CMD_decBdin response to the control signal CTRL_s, the second decoding commandCMD_decB may be delayed by one cycle of the internal clock signalCLK_int and be outputted as the delayed decoding command CMD_decBd.

In the case where the output selection circuit 135 outputs the outputsignal of the second latch 132 as the delayed decoding command CMD_decBdin response to the control signal CTRL_s, the second decoding commandCMD_decB may be delayed by two cycles of the internal clock signalCLK_int and be outputted as the delayed decoding command CMD_decBd.

In the case where the output selection circuit 135 outputs the outputsignal of the third latch 133 as the delayed decoding command CMD_decBdin response to the control signal CTRL_s, the second decoding commandCMD_decB may be delayed by three cycles of the internal clock signalCLK_int and be outputted as the delayed decoding command CMD_decBd.

In the case where the output selection circuit 135 outputs the outputsignal of the fourth latch 134 as the delayed decoding command CMD_decBdin response to the control signal CTRL_s, the second decoding commandCMD_decB may be delayed by four cycles of the internal clock signalCLK_int and be outputted as the delayed decoding command CMD_decBd.

Referring to FIG. 3, the first input/output control latch circuit 141may include fifth and sixth latches 141-1 and 141-2.

The fifth latch 141-1 receives the internal address ADD_int and thesecond decoding command CMD_decB. The sixth latch 141-2 receives theoutput signal of the fifth latch 141-1 and the delayed decoding commandCMD_decBd, and outputs the first latch address ADD_LA.

The fifth latch 141-1 configured as mentioned above receives, latchesand outputs the internal address ADD_int when the second decodingcommand CMD_decB is inputted. The sixth latch 141-2 may output thelatched output signal of the fifth latch 141-1 as the first latchaddress ADD_LA when the delayed decoding command CMD_decBd is inputted.

Therefore, the first input/output control latch circuit 141 may receiveand latch the internal address ADD_int when the second decoding commandCMD_decB is inputted, and output the latched signal as the first latchaddress ADD_LA when the delayed decoding command CMD_decBd is inputted.

The second input/output control latch circuit 211 may be configured insubstantially the same way as the first input/output control latchcircuit 141 except that the designations of the signals inputted theretoand outputted therefrom are different.

Thus, the second input/output control latch circuit 211 may receive andlatch the internal transfer address ADD_intT when the second decodingtransfer command CMD_decBT is inputted, and output the latched internaltransfer address ADD_intT as the third latch address ADD_LAA when thedelayed decoding transfer command CMD_decBdT is inputted.

Referring to FIG. 4, the first input control latch circuit 142 mayinclude a seventh latch 142-1.

The seventh latch 142-1 receives and latches the internal addressADD_int and the first decoding command CMD_decA, and outputs the latchedsignal as the second latch address ADD_LB. For example, the seventhlatch 142-1 receives and latches the internal address ADD_int andoutputs the latched signal as the second latch address ADD_LB, when thefirst decoding command CMD_decA is inputted.

Therefore, the first input control latch circuit 142 may receive andlatch the internal address ADD_int and output the second latch addressADD_LB, when the first decoding command CMD_decA is inputted.

The second input control latch circuit 212 may be configured insubstantially the same way as the first input control latch circuit 142except that the designations of the signals inputted thereto andoutputted therefrom are different.

Thus, the second input control latch circuit 212 may receive and latchthe internal transfer address ADD_intT and output the fourth latchaddress ADDLBB, when the first decoding transfer command CMD_decAT isinputted.

The operation of the semiconductor apparatus in accordance with anembodiment, configured as mentioned above, will be described below.

The external clock signal CLK_ext, the external command CMD_ext and theexternal address ADD_ext are inputted to the first semiconductor chip100 from the exterior. In an embodiment, the external clock signalCLK_ext, the external command CMD_ext and the external address ADD_extmay be generated from a device that is located outside or that isexteriorly located from the first semiconductor chip 100. The externalclock signal CLK_ext, the external command CMD_ext and the externaladdress ADD_ext may be received by the first semiconductor chip from asource located outside the first semiconductor chip 100.

The first to third buffers 111, 112 and 113 of the first semiconductorchip 100 buffer the external clock signal CLKext, the external commandCMD_ext and the external address ADD_ext, and output the internal docksignal CLK_int, the internal command CMD_int and the internal addressADD_int.

The decoder 120 may decode the internal command CMD_int insynchronization with the internal clock signal CLK_int, and output adecoding result as the first decoding command CMDdecA and the seconddecoding command CMD_decB. The decoder 120 may output the first decodingcommand CMD_decA or the second decoding command CMDdecB, according to aresult of decoding the internal command CMD_int.

The output timing control circuit 130 delays the second decoding commandCMD_decB by the predetermined cycle of the internal clock signal CLK_intthat is determined by the control signal CTRL_s, and outputs the delayeddecoding command CMD_decBd.

The first input/output control latch circuit 141 receives and latchesthe internal address ADD_int when the second decoding command CMD_decBis inputted, and outputs the latched signal as the first latch addressADD_LA when the delayed decoding command CMD_decBd is inputted.

The first input control latch circuit 142 receives and latches theinternal address ADD_int when the first decoding command CMD_decA isinputted, and outputs the latched signal as the second latch addressADD_LB.

In the case where the external command CMD_ext is a command which doesnot require output timing control, that is, in the case where a resultof decoding the internal command CMD_int is outputted as the firstdecoding command CMD_decA, the first semiconductor chip 100 latches theinternal address ADD_int in response to the first decoding commandCMD_decA, and outputs the second latch address ADD_LB.

In the case where the external command CMD_ext is a command whichrequires output timing control, that is, in the case where a result ofdecoding the internal command CMD_int is outputted as the seconddecoding command CMD_decB, the first semiconductor chip 100 delays thesecond decoding command CMD_decB by the predetermined cycle of theinternal clock signal CLK_int, and outputs the delayed decoding commandCMD_decBd. The first semiconductor chip 100 latches the internal addressADD_int when the second decoding command CMD_decB is outputted, andoutputs the latched signal as the first latch address ADD_LA when thedelayed decoding command CMD_decBd is outputted.

The first semiconductor chip 100 may output a command inputted from anexterior by delaying it by a predetermined time or output the commandwithout delaying it, depending on the command. An address inputtedtogether with the command may be outputted by being delayed in the sameway as the command or be outputted without being delayed.

The second semiconductor chip 200 receives the internal address ADD_int,the first and second decoding commands CMD_decA and CMD_decB and thedelayed decoding command CMD_decBd from the first semiconductor chip 100through the plurality of through electrodes, that is, the first tofourth through electrodes TSV1, TSV2, TSV3 and TSV4, as the internaltransfer address ADD_intT, the first and second decoding transfercommands CMD_decAT and CMD_decBT and the delayed decoding transfercommand CMD_decBdT.

The second input/output control latch circuit 211 receives and latchesthe internal transfer address ADD_intT when the second decoding transfercommand CMD_decBT is inputted, and outputs the latched signal as thethird latch address ADD_LAA when the delayed to decoding transfercommand CMD_decBdT is inputted.

The second input control latch circuit 212 receives and latches theinternal transfer address ADD_intT when the first decoding transfercommand CMD_decAT is inputted, and outputs the latched signal as thefourth latch address ADD_LBB.

In the case where the external command CMD_ext is a command which doesnot require output timing control, that is, in the case where a resultof decoding the internal command CMD_int is outputted as the firstdecoding command CMD_decA and is inputted from the first semiconductorchip 100, the second semiconductor chip 200 latches the internaltransfer address ADD_intT in response to the first decoding transfercommand CMD_decAT, and outputs the fourth latch address ADD_LBB.

In the case where the external command CMD_ext is a command whichrequires output timing control, that is, in the case where a result ofdecoding the internal command CMD_int is outputted as the seconddecoding command CMD_decB and is inputted as the second decodingtransfer command CMD_decBT from the first semiconductor chip 100, thesecond semiconductor chip 200 receives the delayed decoding commandCMD_decBd generated by delaying the second decoding command CMD_decB bythe predetermined cycle of the internal clock signal CLK_int, as thedelayed decoding transfer command CMD_decBdT. The second semiconductorchip 200 latches the internal transfer address ADD_intT when the seconddecoding transfer command CMD_decBT inputted, and outputs the latchedsignal as the third latch address ADD_LAA when the delayed decodingtransfer command CMD_decBdT is inputted.

In the same manner as the first semiconductor chip 100, the secondsemiconductor chip 200 may output a command inputted from an exterior bydelaying it by a predetermined time or output the command withoutdelaying it, depending on the command. An address inputted together withthe command may be outputted by being delayed in the same way as thecommand or be outputted without being delayed. Since the secondsemiconductor chip 200 may not include the buffers 111, 112 and 113, thedecoder 120 and the output timing control circuit 130 which are includedin the first semiconductor chip 100, area efficiency may be improved.Also, it may not be necessary to form a through electrode fortransferring the internal clock signal CLK_int from the firstsemiconductor chip 100 to the second semiconductor chip 200, and currentto be consumed to transfer the internal clock signal CLK_int whichtransitions cyclically, from the first semiconductor chip 100 to thesecond semiconductor chip 200, may be saved.

The semiconductor apparatuses and or semiconductor integrated circuitsas discussed above (see FIGS. 1-4) are particular useful in the designof other memory devices, processors, and computer systems. For example,referring to FIG. 5, a block diagram of a system employing asemiconductor apparatus and or semiconductor integrated circuit inaccordance with the various embodiments are illustrated and generallydesignated by a reference numeral 1000. The system 1000 may include oneor more processors (i.e., Processor) or, for example but not limited to,central processing units (“CPUs”) 1100. The processor (i.e., CPU) 1100may be used individually or in combination with other processors (i.e.,CPUs). While the processor (i.e., CPU) 1100 will be referred toprimarily in the singular, it will be understood by those skilled in theart that a system 1000 with any number of physical or logical processors(i.e., CPUs) may be implemented.

A chipset 1150 may be operably coupled to the processor (i.e., CPU)1100. The chipset 1150 is a communication pathway for signals betweenthe processor (i.e., CPU) 1100 and other components of the system 1000.Other components of the system 1000 may include a memory controller1200, an input/output (“I/O”) bus 1250, and a disk driver controller1300. Depending on the configuration of the system 1000, any one of anumber of different signals may be transmitted through the chipset 1150,and those skilled in the art will appreciate that the routing of thesignals throughout the system 1000 can be readily adjusted withoutchanging the underlying nature of the system 1000.

As stated above, the memory controller 1200 may be operably coupled tothe chipset 1150. The memory controller 1200 may include at least onesemiconductor apparatus and or semiconductor integrated circuit asdiscussed above with reference to FIGS. 1-4. Thus, the memory controller1200 can receive a request provided from the processor (i.e., CPU) 1100,through the chipset 1150. In alternate embodiments, the memorycontroller 1200 may be integrated into the chipset 1150. The memorycontroller 1200 may be operably coupled to one or more memory devices1350. In an embodiment, the memory devices 1350 may include the at leastone semiconductor apparatus and or semiconductor integrated circuit asdiscussed above with relation to FIGS. 1-4, the memory devices 1350 mayinclude a plurality of word lines and a plurality of bit lines fordefining a plurality of memory cells. The memory devices 1350 may be anyone of a number of industry standard memory types, including but notlimited to, single inline memory modules (“SIMMs”) and dual inlinememory modules (“DIMMs”). Further, the memory devices 1350 mayfacilitate the safe removal of the external data storage devices bystoring both instructions and data.

The chipset 1150 may also be coupled to the I/O bus 1250. The I/O bus1250 may serve as a communication pathway for signals from the chipset1150 to I/O devices 1410, 1420, and 1430. The I/O devices 1410, 1420,and 1430 may include, for example but are not limited to, a mouse 1410,a video display 1420, or a keyboard 1430. The I/O bus 1250 may employany one of a number of communications protocols to communicate with theI/O devices 1410, 1420, and 1430. In an embodiment, the I/O bus 1250 maybe integrated into the chipset 1150.

The disk driver controller 1300 may be operably coupled to the chipset1150. The disk driver controller 1300 may serve as the communicationpathway between the chipset 1150 and one internal disk driver 1450 ormore than one internal disk driver 1450. The internal disk driver 1450may facilitate disconnection of the external data storage devices bystoring both instructions and data. The disk driver controller 1300 andthe internal disk driver 1450 may communicate with each other or withthe chipset 1150 using virtually any type of communication protocol,including, for example but not limited to, all of those mentioned abovewith regard to the I/O bus 1250.

It is important to note that the system 1000 described above in relationto FIG. 5 is merely one example of a semiconductor apparatus and orsemiconductor integrated circuit as discussed above with relation toFIGS. 1-4. In alternate embodiments, such as, for example but notlimited to, cellular phones or digital cameras, the components maydiffer from the embodiments illustrated in FIG. 5.

While various embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare examples only. Accordingly, the semiconductor apparatuses describedherein should not be limited based on the described embodiments.

What is claimed is:
 1. A semiconductor apparatus comprising: a decoderconfigured to decode an internal command, and generate a first decodingcommand or a second decoding command depending on the internal command;and a latch group configured to receive an internal address, and outputthe internal address as a first latch address or second latch addressbased on the first decoding command or the second decoding command,wherein the internal address is delayed by a predetermined time andoutputted as the first latch address if the second decoding command isgenerated, and wherein the internal address is outputted as the secondlatch address if the first decoding command is generated.
 2. Thesemiconductor apparatus according to claim further comprising: an outputtiming control circuit configured to generate a delayed decoding commandbased on the second decoding command being generated by delaying thesecond decoding command by the predetermined time delay.
 3. Thesemiconductor apparatus according to claim 1, wherein the internaladdress is outputted as the second latch address without thepredetermined time delay if the decoder outputs the internal command,without the predetermined time delay, as the first decoding command. 4.The semiconductor apparatus according to claim further comprising: abuffer group configured to buffer an external command and an externaladdress, and output the internal command and the internal address. 5.The semiconductor apparatus according to claim 2, wherein the outputtiming control circuit is configured to delay the second decodingcommand by the predetermined time delay based on a control signal. 6.The semiconductor apparatus according to claim 1, wherein the internalcommand includes a chip select signal, a row address strobe signal, acolumn address strobe signal, a write enable signal and a clock enablesignal.
 7. The semiconductor apparatus according to claim 4, wherein thebuffer group comprises: a first buffer configured to buffer an externalclock and output an internal clock; a second buffer configured to bufferan external command and output an internal command; and a third bufferconfigured to buffer an external address and output an internal address.